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DMG9926UDM
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
BV DSS
I DSS
I GSS
V GS(th)
R DS (ON)
20
?
?
0.5
?
?
?
?
?
22
25
?
1
± 100
0.9
28
32
V
μ A
nA
V
m Ω
I D = 250 μ A, V GS = 0V
V DS = 20V, V GS = 0V
V DS = 0V, V GS = ± 8V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 8.2A
V GS = 2.5V, I D = 3.3A
31
40
V GS = 1.8V, I D = 2.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y FS |
V SD
?
?
7
0.7
?
0.9
S
V
V DS = 10V, I D = 4A
I S = 2.25A, V GS = 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resisitance
C iss
C oss
C rss
R G
?
?
?
?
856
83
78
1.32
?
?
?
?
pF
pF
pF
Ω
V DS = 10V, V GS = 0V
f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q g
?
8.3
?
nC
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
1.3
3.1
8.4
8.2
40.4
8.9
?
?
?
?
?
?
nC
nC
ns
ns
ns
ns
V GS = 4.5V, V DS = 10V, I D = 8.2A
V DD = 10V, V GS = 4.5V,
R L = 10 Ω , R G = 6 Ω
Notes:
5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
30
20
25
20
V GS = 8.0V
V GS = 4.5V
V GS = 3.0V
V GS = 2.5V
V GS = 2.0V
16
12
V DS = 5V
15
8
10
T A = 150°C
5
V GS = 1.5V
4
T A = 125°C
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0
0.4 0.8 1.2 1.6
2
0.5
1
1.5
2
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMG9926UDM
Document number: DS31770 Rev. 4 - 2
2 of 6
www.diodes.com
June 2009
? Diodes Incorporated
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